Teledyne Imaging Sensors designs and fabricates infrared sensors for applications in many wavelengths. Detectors are fabricated in Mercury Cadmium Telluride (HgCdTe) and Indium Gallium Arsenide (InGaAs) materials. Fabrication is achieved through Molecular Beam Epitaxy (MBE) and Liquid Phase Epitaxy (LPE) growth processes. Our choice of materials and fabrication processes paired with complementary metal oxide semiconductor readout integrated circuit (CMOS ROIC) expertise leads to infrared sensors with near-theoretical performance levels.

Teledyne Imaging Sensors has the depth and breadth of experience to fulfill your infrared sensor requirements:

• Wavelengths in Near IR (to 1.7µm), Shortwave Infrared (SWIR, to 2.5µm), Midwave Infrared (MWIR, to 5µm), Longwave Infrared (LWIR, to 12µm), and Very Longwave Infrared (VLWIR, to 15µm or greater)
• Sophisticated CMOS electronics embedded with detectors
• System-on-a-chip capability: clock and bias generation and analog-to-digital conversion
• In-house optics capabilities
• Expertise in MBE and LPE growth processes

Teledyne Imaging Sensors is building on its core strength in imaging sensors by exploring a range of new capabilities. We develop a “substrate-removed” process where infrared and visible images are inherently co-registered. This enables infrared sensors to detect and respond to a continuous spectrum of light from visible to ultra violet.

For more information contact us at:
imaging@teledyne-si.com